GaN Semiconductor Device Market Size, Share, Trends, Statistics and Industry Growth Analysis Report by Type (Opto-semiconductor, RF Semiconductor, Power Semiconductor), Device (Discrete, Integrated, HEMT, MMIC), Application (Lighting and Lasers, Power Drives), Voltage Range, Vertical and Region- Global Growth Driver and Industry Forecast to 2028
Updated on : October 23, 2024
GaN Semiconductor Device Market Size
The global GaN semiconductor device market size is estimated to be worth USD 21.1 billion in 2023 and is projected to reach USD 28.3 billion by 2028, growing at a CAGR of 6.1% during the forecast period from 2023 to 2028.
Increasing adoption of GaN semiconductor devices in consumer and business enterprises, surging deploymnet of GaN semiconductor devices in energy & power industry, and growing integration of GaN semiconductor devices in automotive industry are some of the major factors driving the market growth globally.
GaN Semiconductor Device Market Forecast to 2028
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GaN Semiconductor Device Market Share
The GaN semiconductor device market share is experiencing significant growth, with its market share expanding rapidly. This growth is driven by the increasing demand for high-performance and energy-efficient electronic devices across various industries, including telecommunications, automotive, and consumer electronics. The market is projected to continue its upward trajectory, fueled by advancements in GaN technology that offer superior properties such as higher power density, greater thermal conductivity, and improved efficiency compared to traditional silicon-based devices. As a result, GaN semiconductors are becoming increasingly essential in applications requiring robust and efficient performance.
GaN Semiconductor Device Market Trends
Several key trends are shaping the GaN semiconductor device industry . One prominent trend is the rising adoption of GaN technology in power electronics and RF applications due to its high efficiency and power handling capabilities. Additionally, the growing focus on renewable energy sources and electric vehicles is driving the demand for GaN-based components in power conversion and battery charging systems. The market is also witnessing increased investment in research and development to further enhance GaN technology, leading to innovations such as GaN-on-silicon and GaN-on-diamond substrates, which promise to improve performance and reduce costs.
GaN Semiconductor Device Market Analysis
The GaN semiconductor device market analysis reveals a robust growth trajectory driven by technological advancements and expanding applications. The market's expansion is supported by the superior properties of GaN semiconductors, which offer advantages in terms of power efficiency, thermal management, and miniaturization. This analysis highlights the growing penetration of GaN devices in sectors like telecommunications, automotive, and consumer electronics, where high performance and efficiency are critical. Furthermore, strategic collaborations and investments by key industry players are fostering innovation and market growth, positioning GaN semiconductors as a pivotal technology for the future of high-performance electronic devices.
GaN Semiconductor Device Market Dynamics
Driver: Growing adoption of GaN semiconductor devices in consumer and business enterprises
The increasing demand for consumer electronics such as laptops, smartphones, power adapters, high-speed chargers, LED lighting, smart home devices, and gaming devices is expected to have a major impact on the growth of this market. The integration of GaN semiconductor devices in consumer electronics results in high power density and enhances efficiency. It enhances charging speeds, offers longer lifespans, and consumes less power. GaN semiconductor devices are also being deployed in enterprise applications as they are being used in base stations and other network equipment. Its high-power handling and high-frequency capabilities enhance wireless communications. Therefore, their increasing demand in the consumer electronics industry and from business enterprises is projected to fuel the market growth.
Restraint: High manufacturing cost
The high cost of GaN semiconductor devices has a major impact on their widespread adoption. Their high cost can be attributed to several factors. Firstly, the production of GaN substrates, the foundation upon which the devices are built, involves intricate techniques that require specialized equipment and expertise. This complexity significantly drives up manufacturing costs compared with more mature semiconductor materials like silicon. Additionally, the low availability of high-quality GaN substrates further contributes to their elevated price, limiting economies of scale in production.
Opportunity: Growing integration of GaN semiconductor devices in automotive industry
The automotive industry is experiencing a rise in demand for GaN semiconductor devices, which are used to improve the performance efficiency of electrification, connectivity, and autonomous driving. The limitations of power conversion in silicon semiconductor devices have led to an increased demand for GaN, which provides improved efficiency, speed, and smaller size to automotive electronics. GaN semiconductor devices can be used in several automotive applications such as hybrid and electric power DC-DC converters, Lidar and driver assist (ADAS) and autonomous navigation systems, motor drives, infotainment systems, and in Class D Audio systems. Therefore, the automotive industry is likely to see an increase in the deployment of GaN semiconductor.
The GaN market is rapidly expanding as Gallium Nitride (GaN) technology continues to revolutionize industries that require high-performance, energy-efficient solutions. GaN, known for its wide-bandgap properties, enables faster switching, higher power densities, and greater efficiency compared to traditional silicon semiconductors. This makes it ideal for applications in power electronics, RF devices, 5G infrastructure, electric vehicles (EVs), and renewable energy systems. The GaN market is seeing significant demand in sectors like telecommunications, automotive, consumer electronics, and industrial automation, where the need for more compact and efficient devices is growing. As the world shifts towards energy-efficient technologies, the GaN market is expected to experience continued growth, driven by innovations in power conversion, wireless communication, and advanced manufacturing techniques. GaN’s ability to handle high power and operate at high frequencies positions it as a key enabler of next-generation electronics, making it a cornerstone of the future of technology.
Challenge: Manufacturing complexities associated with GaN semiconductor devices
GaN semiconductor devices involve several manufacturing complexities due to their unique properties and material characteristics. The epitaxial growth of GaN layers on substrates is an important step in GaN device manufacturing. These layers must be grown with crystalline quality and low defect density to achieve the desired optimal device performance. Likewise, while going through all the manufacturing processes, equipment, and materials, factors like thermal coefficients, polarization effects, bandgap and chemical stability, dopants in the crystal lattice, a stable gate insulator layer, crystal defect management, and thermal stability play an important role. These challenges can be resolved by launching reliable testing methods.
GaN Semiconductor Device Market Ecosystem
The prominent players in the GaN semiconductor device market are Qorvo, Inc. (US), Wolfspeed, Inc. (US), Sumitomo Electric Industries, Ltd. (Japan), MACOM Technology Solutions Holdings, Inc. (US) and Infineon Technologies AG (Germany). These companies perform organic and inorganic growth strategies to expand themselves globally by providing advanced products of GaN semiconductor devices.
GaN Semiconductor Device Market Segmentation
Discrete semiconductor segment to register largest market share in the GaN semiconductor device market during forecast period
Discrete GaN semiconductor components include GaN transistors and GaN diodes that are individually packaged and marketed. These components are used in diverse applications such as power supply units, inverters, and radio frequency (RF) amplifiers. GaN transistors and diodes effectively manage substantial voltage and current levels, leading to powerful designs. Additionally, they enable more compact and lightweight circuits suitable for applications where constraints on size and weight are paramount
Power & Energy to register highest CAGR in the GaN semiconductor device market during forecast period
The energy & power segment is expected to grow at the highest CAGR during the forecast period. This growth can be attributed to the rising integration of GaN semiconductor devices into electronic systems to work in elevated temperatures, pressures, and voltages. Moreover, The GaN semiconductor technology foresees extensive adoption in energy and power solutions, encompassing realms such as energy storage systems, solar DC to AC inverters, AC solar panels, and volt-ampere reactive (VAR) compensators in the future.
GaN Semiconductor Device Market Regional Analysis
Asia Pacific held for the largest GaN semiconductor device market share in 2022
Asia Pacific is accounted for the largest share of the GaN semiconductor device market in 2022. The presence of established several semiconductor manufacturing companies such as Toshiba (Japan), Nichia Corporation (Japan), and Mitsubishi Electric (Japan), increasing integration in consumer & business enterprise verticals, government-led initiatives for innovation and industrial development are the major factors driving the market growth in Asia Pacific.
GaN Semiconductor Device Market Statistics by Region
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Top GaN Semiconductor Device Companies - Market Key Players
The major players in the GaN semiconductor device companies include
- Qorvo, Inc. (US),
- Wolfspeed, Inc. (US),
- Sumitomo Electric Industries, Ltd. (Japan),
- MACOM Technology Solutions Holdings, Inc. (US) and
- Infineon Technologies AG (Germany). These companies have used both organic and inorganic growth strategies such as product launches, agreements, collaborations, acquisitions, partnerships and expansions to strengthen their position in the market.
GaN Semiconductor Device Market Report Scope
Report Metric |
Details |
Estimated Market Size |
USD 21.1 Billion |
Projected Market Size |
USD 28.3 Billion |
Growth Rate |
6.1% |
Market size available for years |
2019–2028 |
Base year considered |
2022 |
Forecast period |
2023–2028 |
Forecast units |
Value (USD Million/Billion), Volume (Million Units) |
Segments covered |
By Type, Device, Application, Voltage Range, Vertical and Region |
Geographies covered |
North America, Europe, Asia Pacific, and Rest of the World (RoW) |
Companies covered |
The major players in the GaN semiconductor device market are Wolfspeed, Inc. (US), Qorvo, Inc. (US), MACOM Technology Solutions Holdings, Inc. (US), Infineon Technologies AG (Germany), Sumitomo Electric Industries, Ltd. (Japan), Mitsubishi Electric Group (Japan), NexGen Power Systems. (US), GaN Systems (Canada), Efficient Power Conversion Corporation (US), Odyssey Semiconductor Technologies, Inc. (US), ROHM Co., Ltd. (Japan), STMicroelectronics N.V. (Switzerland), and NXP Semiconductors N.V. (Netherlands). |
GaN Semiconductor Device Market size Highlights
The study segments the GaN semiconductor device market size based on type, device, application, voltage range, vertical, and region at the regional and global level.
Segment |
Subsegment |
GaN semiconductor device market size By Type |
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GaN semiconductor device market, By Device |
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GaN semiconductor device market size, By Application |
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By Vertical |
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GaN semiconductor device market size, By Voltage Range |
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By Region |
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Recent Developments in GaN Semiconductor Device Industry:
- In June 2023, Qorvo, Inc. announced the launch of QPB3810, a GaN-based power amplifier. It has integrated bias control for 5G massive multiple-input multiple-output (mMIMO) applications.
- In March 2023, Infineon Technologies announced the plan to acquire GaN Systems for USD 830 million. This acquisition will strengthen the GaN portfolio and its position in the power system market.
- In October 2022, Sumitomo Electric Industries, Ltd. announced the launch of GaN-HEMT, which uses N-polar GaN and hafnium (Hf)-based, highly heat-resistant, and high-dielectric material with high capacity and high-speed communications. The company strategically launched the GaN HEMT to strengthen its position for the post-5G era.
- In June 2021, Wolfspeed, Inc. announced a partnership with MaxLinear, Inc. to innovate a new solution that increases the wireless capacity of a 5G base station that supports simultaneous users and increases the speed of data transmissions.
- In January 2021, MACOM signed a cooperative research and development agreement with the US Air Force Research Laboratory regarding the Gallium Nitride-on-Silicon technology. Under this agreement MACOM and Air Force Research Laboratory (AFRL) will work together to transfer AFRL’s production of 0.14 micron GaN-on-SiC semiconductor process to MACOM’s trusted foundry based in US.
Frequently Asked Questions (FAQs):
What is the current size of the global GaN semiconductor device market?
The GaN semiconductor device market is estimated to be worth USD 21.1 billion in 2023 and is projected to reach USD 28.3 billion by 2028, at a CAGR of 6.1% during the forecast period. Increasing adoption of GaN semiconductor devices in consumer and business enterprises, surging deployment of GaN semiconductor devices in energy & power industry, and growing integration of GaN semiconductor devices in automotive industry are some of the major factors driving the market growth globally.
Who are the winners in the global GaN semiconductor device market?
Companies such as Qorvo, Inc. (US), Wolfspeed, Inc. (US), Sumitomo Electric Industries, Ltd. (Japan), MACOM Technology Solutions Holdings, Inc. (US) and Infineon Technologies AG (Germany), fall under the winners category.
Which region is expected to hold the highest market share?
Asia Pacific is expected to dominate the GaN semiconductor device market during forecast period. The presence of established several semiconductor manufacturing companies such as Toshiba (Japan), Nichia Corporation (Japan), and Mitsubishi Electric (Japan), increasing integration in consumer & business enterprise verticals, government-led initiatives for innovation and industrial development are the major factors driving the market growth in Asia Pacific.
What are the major drivers and opportunities related to GaN semiconductor device market growth?
Increasing adoption of GaN semiconductor devices in consumer and business enterprises, surging deployment of GaN semiconductor devices in energy & power industry, and growing integration of GaN semiconductor devices in automotive industry are some of the major drivers and opportunities for GaN semiconductor device market.
What are the major strategies adopted by GaN Semiconductor Device industry players?
The key players have adopted product launches, agreements, collaborations, partnerships, acquisitions, and expansions to strengthen their position in the GaN semiconductor device market.
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The research study involved 4 major activities in estimating the size of the GaN semiconductor device market. Exhaustive secondary research has been done to collect important information about the market and peer markets. The validation of these findings, assumptions, and sizing with the help of primary research with industry experts across the value chain has been the next step. Both top-down and bottom-up approaches have been used to estimate the market size. Post which the market breakdown and data triangulation have been adopted to estimate the market sizes of segments and sub-segments.
Secondary Research
In the secondary research process, various secondary sources have been referred to for identifying and collecting information required for this study. The secondary sources include annual reports, press releases, and investor presentations of companies, white papers, and articles from recognized authors. Secondary research has been mainly done to obtain key information about the market’s value chain, the pool of key market players, market segmentation according to industry trends, regional outlook, and developments from both market and technology perspectives.
Primary Research
In primary research, various primary sources from both supply and demand sides have been interviewed to obtain the qualitative and quantitative insights required for this report. Primary sources from the supply side include experts such as CEOs, vice presidents, marketing directors, manufacturers, technology and innovation directors, end users, and related executives from multiple key companies and organizations operating in the GaN semiconductor device ecosystem.
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Market Size Estimation
In the market engineering process, both top-down and bottom-up approaches have been used, along with data triangulation methods, to estimate and validate the size of the GaN semiconductor device market and other dependent submarkets. The research methodology used to estimate the market sizes includes the following:
- Identifying stakeholders in the GaN semiconductor device market that influence the entire market, along with participants across the value chain.
- Analyzing major manufacturers of GaN semiconductor devices and studying their product portfolios
- Analyzing trends related to the adoption of GaN semiconductor devices
- Tracking the recent and upcoming developments in the market that include investments, R&D activities, product launches, collaborations, acquisitions, agreements, and partnerships, as well as forecasting the market size based on these developments and other critical parameters
- Carrying out multiple discussions with key opinion leaders to identify the adoption trends of GaN semiconductor devices
- Segmenting the overall market into various other market segments
- Validating the estimates at every level through discussions with key opinion leaders, such as chief executives (CXOs), directors, and operation managers, and finally with the domain experts at MarketsandMarkets
Market Size Estimation Methodology-Bottom-up Approach
Data Triangulation
After arriving at the overall market size by the market size estimation process explained in the earlier section, the overall GaN semiconductor device market has been divided into several segments and subsegments. The data triangulation and market breakdown procedures have been used to complete the overall market engineering process and arrive at the exact statistics for all segments, wherever applicable. The data has been triangulated by studying various factors and trends from both the demand and supply sides. Along with data triangulation and market breakdown, the market has been validated by top-down and bottom-up approaches.
Market Definition
Gallium nitride (GaN) semiconductor device is a robust and mechanically stable semiconductor device that offers a wide bandgap with exceptional properties such as high-power capability, enhanced thermal conductivity, and high-performance efficiency. It delivers higher breakdown strength, faster switching speed, superior thermal conductivity, and lower on-resistance, making the GaN-based power devices more efficient than traditional silicon-based power devices. GaN semiconductor devices are used in lighting, lasers, power drives, supplies, inverters, and radio frequency (RF) components. It can successfully replace silicon semiconductors in power drives, supplies, inverters, and RF applications, as it delivers versatile features and enhanced performance efficiency. As a result, GaN semiconductor device is expected to have a high market growth due to its potential to cater to various high-performance electronic applications.
Stakeholders
- Raw material suppliers
- Design tool and fabrication equipment vendors
- Wafer manufacturers
- Wafer equipment manufacturers
- Integrated devices manufacturers (IDMs)
- Pure-play foundry vendors
- Non-pure-play (IDM) foundry vendors
- Electronic design automation (EDA) vendors
- Fabrication players
- Semiconductor intellectual property vendors
- Original devices manufacturers (ODMs) (discrete and chip manufacturers)
- Original equipment manufacturers (OEMs) (electronic equipment manufacturers)
- Assembly, testing, and packaging vendors
- Distributors and Resellers
- End Users
The main objectives of this study are as follows:
- To define, analyze and forecast the gallium nitride (GaN) semiconductor device market based on type, device, application, vertical, voltage range, and region in terms of value.
- To define, analyze, and forecast the GaN semiconductor device market based on device in terms of volume
- To forecast the market size for various segments with respect to four main regions, namely, North America, Europe, Asia Pacific, and the Rest of the World (RoW)
- To provide detailed information regarding the major drivers, restraints, opportunities, and challenges influencing the growth of the GaN semiconductor device market
- To study and analyze the complete value chain of the GaN semiconductor device market
- To strategically analyze the micromarkets with respect to individual growth trends, prospects, and contributions to the total market
- To analyze the GaN semiconductor device ecosystem; trends/disruptions impacting customers’ businesses; technology analysis; pricing analysis; Porter’s five forces analysis; key stakeholders & buying criteria; case study analysis; trade analysis; patent analysis; key conferences & events, 2023–2024; and tariff and regulations related to the GaN semiconductor device market.
- To analyze opportunities in the market for various stakeholders by identifying the high growth segments
- To strategically profile the key players and comprehensively analyze their market position in terms of ranking and core competencies, along with detailing the competitive landscape for the market leaders
- To analyze competitive developments such as product launches, agreements, collaborations, partnerships, acquisitions, and expansions carried out by players in the GaN semiconductor device market
Available Customizations:
With the given market data, MarketsandMarkets offers customizations according to the specific requirements of companies. The following customization options are available for the report:
Country-wise Information:
- Analysis for additional countries (up to five)
Company Information:
- Detailed analysis and profiling of additional market players (up to five)
Growth opportunities and latent adjacency in GaN Semiconductor Device Market